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agilent mga-725m4 low noise amplifier with bypass switch in miniature leadless package data sheet description agilent technologiess mga-725m4 is an economical, easy-to-use gaas mmic low noise amplifier (lna), which is designed for an adaptive cdma receiver lna and adaptive cdma transmit driver amplifier. the mga-725m4 features a typical noise figure of 1.4 db and 14.4 db associated gain from a single stage, feedback fet amplifier. the output is internally matched to 50 ? . the input is optimally internally matched for lowest noise figure into 50 ? . the input may be additionally externally matched for low vswr through the addition of a single series inductor. when set into the bypass mode, both input and output are internally matched to 50 ? . features operating frequency: 0.1 ghz ~ 6.0 ghz noise figure: 1.2 db at 800 mhz 1.4 db at 1900 mhz gain: 17.5 db at 800 mhz 15.7 db at 1900 mhz bypass switch on chip loss = typ 1.6 db (i d < 5 a) iip3 = +10 dbm adjustable input ip3: +2 to +14.7 dbm ? iniature package: 1.4 mm x 1.2 mm 2.7 v to 5.0 v operation applications cdma (is-95, j-std-008) receiver lna ? ransmit driver amp tdma (is-136) handsets minipak 1.4 mm x 1.2 mm package pin connections and package marking the mga-725m4 offers an integrated solution of lna with adjustable iip3. the iip3 can be fixed to a desired current level for the receivers linearity require- ments. the lna has a bypass switch function, which sets the current to zero and provides low insertion loss. the bypass mode also boosts dynamic range when high level signal is being received. for the cdma driver amplifier applications, the mga-725m4 provides suitable gain and linear- ity to meet the acpr requirement when the handset transmits the highest power. when transmitting lower power, the mga-725m4 can be bypassed, saving the drawing current. the mga-725m4 is a gaas mmic, processed on agilents cost effective phemt (pseudomorphic high electron mobility transistor). it is housed in the minipak 1412 package. it is part of the agilent t echnologies cdmadvantage rf chipset. simplified schematic gnd gnd output & v d control gainfet input & v ref ax ground input ground output ax 1.+ 01.11.13, 9:01 am page 1 "epcf1bhf.blfs+11$
mga-725m4 absolute maximum ratings [1] symbol parameter units absolute operation maximum maximum v d maximum input to output voltage v 5.5 4.2 v gs maximum input to ground dc voltage v +.3 +.1 -5.5 -4.2 i d supply current ma 70 60 p d power dissipation [1,2] mw 300 250 p in cw rf input power dbm +20 +13 t j junction temperature c 170 150 t stg storage temperature c -65 to +150 -40 to +85 thermal resistance: [2] jc = 180 c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. t case = 25 c. electrical specifications, t c = +25 c, z o = 50 ? , i d = 20 ma, v d = 3v, unless noted. symbol parameter and test condition units min. typ. max. v gs test [1] f = 2.0 ghz v d = 3.0v (v ds = 2.5v) i d = 20 ma v -0.65 -0.51 -0.37 0.035 nf test [1] f = 2.0 ghz v d = 3.0v (= v ds - v gs )i d = 20 ma db 1.4 1.8 0.06 ga test [1] f = 2.0 ghz v d = 3.0v (= v ds - v gs )i d = 20 ma db 13.5 14.4 15.5 0.42 iip3 test [1] f = 2.04 ghz v d = 3.0v (= v ds - v gs )i d = 20 ma db 8.5 9.9 0.35 il test [1,4] f = 2.0 ghz v d = 3.0v (v ds = 0v, v gs = -3v) i d = 0.0 ma db 1.6 3.5 0.07 ig test [1,4] f = 2.0 ghz v d = 3.0v (v ds = 0v, v gs = -3v) i d = 0.0 ma a 2.0 2.0 nfo [2] minimum noise figure f = 1.0 ghz db 1.2 as measured in figure 2 test circuit f = 1.5 ghz 1.2 (computed from s-parameter and noise f = 2.0 ghz 1.3 parameter performance as measured in a f = 2.5 ghz 1.3 50 ? impedance fixture) f = 4.0 ghz 1.4 f = 6.0 ghz 1.6 gain [2] associated gain at nfo f = 1.0 ghz db 17.6 as measured in figure 2 test circuit f = 1.5 ghz 16.6 (computed from s-parameter and noise f = 2.0 ghz 15.7 parameter performance as measured in a f = 2.5 ghz 14.8 50 ? impedance fixture) f = 4.0 ghz 12.8 f = 6.0 ghz 10.6 p1db [1] output power at 1 db gain compression i d = 0 ma dbm 15.2 as measured in figure 1 test circuit i d = 5 ma 3.4 frequency = 2.04 ghz i d = 10 ma 9.14 i d = 20 ma 13.13 0.53 i d = 40 ma 15.25 i d = 60 ma 16.16 iip3 [1] input third order intercept point i d = 0 ma dbm 35 as measured in figure 1 test circuit i d = 5 ma 3.1 frequency = 2.04 ghz i d = 10 ma 6.6 i d = 20 ma 9.9 0.35 i d = 40 ma 13.0 i d = 60 ma 14.7 rlin [1] input return loss as measured in fig. 1 f = 2.0 ghz db -8.2 0.41 rlout [1] output return loss as measured in fig. 1 f = 2.0 ghz db -15 1.3 isol [1] isolation |s 12 | 2 as measured in fig. 2 f = 2.0 ghz db -23.4 0.4 notes: 1. standard deviation and typical data as measured in the test circuit of figure 1. data based on 500 part sample size from 3 wafer lots. 2. typical data computed from s-parameter and noise parameter data measured in a 50 ? system. 3. v d = total device voltage = v dg 4. bypass mode voltages shown are used in production test. for source resistor biasing, bypass mode is set by opening the sou rce resistor. 1.+ 01.11.13, 9:01 am page 2 "epcf1bhf.blfs+11$
mga-725m4 typical performance frequency = 2.0 ghz, t c = 25 c, z o = 50 ? , v d = 3v, i d = 20 ma unless stated otherwise. all data as measured in figure 2 test system (input and output presented to 50 ? ). figure 1. mga-725m4 production test circuit. figure 2. mga-725m4 50 ? t est circuit for s, noise, and power parameters. rf input v gs 47 pf 1000 pf 1.2 nh 27 nh 27 nh 2.7 nh 1000 pf 100 pf v ds rf output ax 100 pf 47 pf rf input bias tee v d rf output ax v gs bias tee icm fixture 0 0.5 1.0 3.0 2.5 2.0 1.5 012 34 6 5 nf (db) frequency (ghz) figure 3. noise figure vs. frequency and voltage. 2.7 v 3.0 v 3.3 v 0 6 4 2 8 18 16 14 12 10 012 34 6 5 gain (db) frequency (ghz) figure 4. gain vs. frequency and voltage. 2.7v 3.0v 3.3v 0 2 4 14 12 10 8 6 012 34 6 5 input ip 3 (db) frequency (ghz) figure 5. input third order intercept point vs. frequency and voltage. 2.7v 3.0v 3.3v 012 34 6 5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency and temperature. -40 c +25 c +85 c 0 1 4 3 2 18 012 34 6 5 gain (db) frequency (ghz) figure 7. gain vs. frequency and temperature. -40 c +25 c +85 c 0 6 4 2 8 16 14 12 10 012 34 6 5 input ip 3 (dbm) frequency (ghz) figure 8. input third order intercept point vs. frequency and temperature. -40 c +25 c +85 c 18 0 6 4 2 8 16 14 12 10 0 2 8 6 4 012 34 6 5 vswr (lna) frequency (ghz) figure 9. lna on (switch off) vswr vs. frequency. input output 012 34 6 5 vswr (lna) frequency (ghz) figure 10. lna off (switch on) vswr vs. frequency. input output 0 2 4 14 12 10 8 6 -5 -3 -4 0 -1 -2 012 34 6 5 insertion loss (db) frequency (ghz) figure 11. insertion loss (switch on) vs. frequency and temperature. -40 c +25 c +85 c 1.+ 01.11.13, 9:01 am page 3 "epcf1bhf.blfs+11$
mga-725m4 typical performance, continued frequency = 2.0 ghz, t c = 25 c, z o = 50 ? , v d = 3v, i d = 20 ma unless stated otherwise. all data as measured in figure 2 test system (input and output presented to 50 ? ). 0 2 4 14 12 10 8 6 012 34 6 5 p1db (dbm) frequency (ghz) figure 12. output power at 1 db compression vs. frequency and voltage. 2.7v 3.0v 3.3v 0 2 4 14 12 10 8 6 012 34 6 5 p1db (dbm) frequency (ghz) figure 13. output power at 1 db compression vs. frequency and temperature. 2.7v 3.0v 3.3v 012 34 6 5 input ip 3 (dbm) frequency (ghz) figure 14. input third order intercept point vs. frequency and current. 10 ma 20 ma 40 ma 18 0 6 4 2 8 16 14 12 10 02040 80 60 nf (db) i d current (ma) figure 15. noise figure vs. current and temperature. -40 c +25 c +85 c 0 1 4 3 2 18 02040 80 60 gain (db) i d current (ma) figure 16. associated gain vs. current and temperature. -40 c +25 c +85 c 0 6 4 2 8 16 14 12 10 18 02040 80 60 input ip3 (dbm) i d current (ma) figure 17. input third intercept point vs. current and temperature. -40 c +25 c +85 c 0 6 4 2 8 16 14 12 10 18 02040 80 60 p1db (dbm) i d current (ma) figure 18. output power at 1 db compression vs. current and temperature. -40 c +25 c +85 c 0 6 4 2 8 16 14 12 10 0 2 4 14 12 10 8 6 010203 040 60 50 vswr i d current (ma) figure 19. lna on vswr and gamma opt vs. current. input output gamma 0 0.40 0.20 1.00 0.80 0.60 010203 040 60 50 v ref (v) i d current (ma) figure 20. control voltage vs. current and temperature. -40 c +25 c +85 c 1.+ 01.11.13, 9:01 am page 4 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters: bypass mode t c = 25 c, v d = 3.0 v, i d = 0 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 11 s 21 s 12 s 22 (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) 0.1 0.991 -11.1 0.175 74.9 0.175 75.5 0.943 -15.1 -0.08 -15.12 -15.16 -0.51 0.5 0.741 -44.1 0.592 37.9 0.593 38.1 0.624 -51.1 -2.61 -4.55 -4.54 -4.09 0.8 0.580 -5.8 0.710 22.8 0.709 22.9 0.470 -64.1 -4.74 -2.97 -2.99 -6.57 0.9 0.536 -61.8 0.733 18.9 0.732 19.0 0.429 -67.3 -5.41 -2.70 -2.71 -7.34 1.0 0.498 -64.6 0.751 15.4 0.750 15.6 0.400 -69.6 -6.05 -2.49 -2.50 -7.95 1.1 0.468 -66.8 0.764 12.5 0.763 12.4 0.371 -72.3 -6.60 -2.34 -2.35 -8.61 1.2 0.442 -69.2 0.775 9.7 0.774 9.8 0.346 -74.0 -7.09 -2.22 -2.22 -9.21 1.3 0.418 -70.9 0.783 7.1 0.783 7.3 0.328 -75.8 -7.58 -2.12 -2.13 -9.68 1.4 0.395 -72.6 0.793 4.7 0.791 5.0 0.309 -77.2 -8.06 -2.02 -2.04 -10.19 1.5 0.378 -74.7 0.797 2.7 0.796 2.7 0.293 -78.2 -8.45 -1.98 -1.98 -10.65 1.6 0.362 -76.0 0.799 0.5 0.800 0.7 0.281 -79.5 -8.84 -1.94 -1.94 -11.03 1.7 0.349 -77.6 0.805 -1.5 0.805 -1.3 0.267 -80.4 -9.14 -1.88 -1.89 -11.46 1.8 0.334 -78.9 0.809 -3.3 0.809 -3.1 0.258 -80.9 -9.53 -1.84 -1.84 -11.75 1.9 0.326 -79.9 0.811 -5.1 0.811 -5.1 0.247 -81.8 -9.74 -1.82 -1.82 -12.13 2.0 0.357 -85.4 0.826 -8.5 0.827 -8.3 0.243 -86.5 -8.96 -1.66 -1.65 -12.29 2.1 0.345 -86.0 0.826 -10.2 0.827 -10.0 0.238 -87.8 -9.25 -1.66 -1.65 -12.47 2.2 0.338 -86.6 0.825 -11.5 0.825 -11.5 0.230 -88.5 -9.43 -1.67 -1.67 -12.77 2.3 0.326 -87.7 0.826 -13.2 0.825 -12.9 0.228 -89.3 -9.73 -1.66 -1.67 -12.86 2.4 0.321 -87.9 0.825 -14.7 0.824 -14.4 0.222 -90.6 -9.87 -1.67 -1.69 -13.06 2.5 0.319 -88.9 0.825 -14.6 0.824 -14.6 0.218 -90.1 -9.92 -1.67 -1.68 -13.24 3.0 0.288 -93.8 0.820 -21.2 0.820 -21.4 0.206 -94.6 -10.81 -1.72 -1.72 -13.74 3.5 0.272 -97.0 0.816 -27.4 0.815 -27.4 0.198 -98.8 -11.31 -1.76 -1.77 -14.06 4.0 0.263 -101.4 0.810 -33.5 0.811 -33.6 0.195 -103.8 -11.59 -1.83 -1.82 -14.18 4.5 0.256 -106.1 0.807 -39.3 0.806 -39.2 0.192 -108.9 -11.84 -1.86 -1.88 -14.33 5.0 0.249 -110.9 0.800 -45.2 0.800 -45.2 0.190 -114.5 -12.07 -1.94 -1.93 -14.41 5.5 0.243 -114.8 0.793 -50.7 0.795 -50.7 0.191 -119.7 -12.30 -2.01 -2.00 -14.39 6.0 0.229 -117.1 0.781 -57.0 0.783 -57.0 0.260 -138.9 -12.81 -2.14 -2.13 -11.69 6.5 0.227 -125.3 0.774 -62.6 0.773 -62.6 0.256 -146.5 -12.88 -2.23 -2.23 -11.83 7.0 0.218 -130.1 0.764 -68.1 0.768 -67.9 0.252 -153.6 -13.25 -2.34 -2.30 -11.99 7.5 0.221 -137.5 0.758 -73.5 0.760 -73.2 0.243 -159.8 -13.11 -2.40 -2.39 -12.28 8.0 0.224 -144.2 0.749 -79.1 0.753 -78.9 0.230 -166.5 -12.98 -2.51 -2.46 -12.75 1.+ 01.11.13, 9:01 am page 5 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters and noise parameters t c = 25 c, v d = 3.0v, i d = 5 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out g max isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.10 0.83 -8 4.17 175 0.05 20 0.58 -7 12.4 -1.6 -4.7 18.7 -25.8 0.50 0.73 -24 4.32 164 0.06 13 0.51 -13 12.7 -2.7 -5.8 16.6 -24.4 0.80 0.71 -35 4.19 156 0.06 18 0.51 -19 12.4 -3.0 -5.9 16.5 -24.0 0.90 0.71 -39 4.14 153 0.06 19 0.50 -21 12.3 -3.0 -6.0 16.6 -23.9 1.00 0.69 -42 4.09 151 0.07 20 0.50 -23 12.2 -3.2 -6.0 16.5 -23.6 1.10 0.69 -45 4.03 148 0.07 22 0.50 -26 12.1 -3.3 -6.0 16.7 -23.3 1.20 0.68 -49 3.99 146 0.07 23 0.50 -28 12.0 -3.4 -6.0 16.7 -23.2 1.30 0.67 -52 3.94 143 0.07 23 0.50 -30 11.9 -3.5 -6.0 17.4 -23.0 1.40 0.67 -55 3.89 141 0.07 24 0.50 -32 11.8 -3.5 -6.1 17.3 -22.7 1.50 0.66 -59 3.83 139 0.08 25 0.50 -34 11.7 -3.6 -6.1 17.1 -22.5 1.60 0.66 -62 3.79 136 0.08 25 0.49 -36 11.6 -3.6 -6.2 16.9 -22.2 1.70 0.66 -65 3.74 134 0.08 26 0.49 -38 11.5 -3.7 -6.2 16.7 -21.9 1.80 0.66 -68 3.69 132 0.08 26 0.49 -40 11.3 -3.7 -6.2 16.5 -21.7 1.90 0.65 -71 3.63 130 0.08 26 0.49 -42 11.2 -3.7 -6.3 16.4 -21.5 2.00 0.65 -74 3.58 127 0.09 26 0.49 -44 11.1 -3.8 -6.3 16.2 -21.3 2.10 0.65 -77 3.54 125 0.09 26 0.48 -46 11.0 -3.8 -6.4 16.0 -21.1 2.20 0.64 -80 3.50 123 0.09 27 0.48 -48 10.9 -3.8 -6.5 15.9 -20.9 2.30 0.64 -82 3.43 121 0.09 26 0.48 -50 10.7 -3.9 -6.4 15.7 -20.6 2.40 0.64 -85 3.39 119 0.10 26 0.47 -52 10.6 -3.9 -6.5 15.5 -20.4 2.50 0.64 -88 3.35 117 0.10 26 0.47 -54 10.5 -3.9 -6.6 15.4 -20.3 3.00 0.63 -100 3.12 107 0.11 24 0.46 -62 9.9 -4.0 -6.8 14.7 -19.5 3.50 0.62 -112 2.91 98 0.12 22 0.44 -70 9.3 -4.2 -7.1 14.0 -18.8 4.00 0.61 -123 2.72 90 0.12 20 0.43 -78 8.7 -4.3 -7.4 13.5 -18.3 4.50 0.60 -133 2.55 82 0.13 18 0.42 -85 8.1 -4.4 -7.6 13.0 -17.9 5.00 0.60 -142 2.40 74 0.13 15 0.40 -91 7.6 -4.5 -7.9 12.6 -17.5 5.50 0.59 -151 2.27 67 0.14 13 0.39 -97 7.1 -4.6 -8.2 12.2 -17.2 6.00 0.57 -160 2.15 59 0.14 9 0.38 -109 6.6 -4.9 -8.4 11.8 -17.0 6.50 0.58 -162 1.93 49 0.14 7 0.38 -123 5.7 -4.8 -8.5 11.0 -17.3 7.00 0.56 -174 1.88 46 0.14 5 0.36 -128 5.5 -5.0 -8.8 10.0 -16.9 7.50 0.53 175 1.83 40 0.15 3 0.36 -133 5.2 -5.5 -8.9 8.9 -16.6 8.00 0.54 170 1.77 34 0.15 1 0.35 -134 4.9 -5.4 -9.1 8.6 -16.4 freq nf min gamma opt rn g a (ghz) (db) mag ang (db) 0.8 1.24 0.40 30 16.5 16.0 0.9 1.26 0.40 34 14.5 15.3 1.0 1.34 0.36 42 13.9 15.0 1.5 1.42 0.33 53 13.0 14.4 1.8 1.45 0.30 58 12.6 14.0 1.9 1.48 0.29 62 12.3 13.8 2.0 1.53 0.26 61 11.9 13.3 2.1 1.56 0.24 62 11.6 13.2 2.2 1.58 0.23 68 11.3 13.0 2.3 1.58 0.24 69 11.4 12.9 2.4 1.58 0.23 69 10.9 12.8 2.5 1.61 0.23 76 10.7 12.6 3.0 1.63 0.23 84 10.1 12.1 3.5 1.69 0.24 101 9.5 11.5 4.0 1.69 0.26 108 9.1 11.0 4.5 1.74 0.26 122 8.8 10.3 5.0 1.80 0.27 134 7.8 9.8 5.5 1.81 0.28 144 7.2 9.3 6.0 1.89 0.32 156 6.4 8.7 1.+ 01.11.13, 9:01 am page 6 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters and noise parameters t c = 25 c, v d = 3.0v, i d = 10 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out g max isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.10 0.79 -9 5.57 174 0.05 19 0.48 -9 14.9 -2.0 -6.4 20.7 -26.6 0.50 0.68 -26 5.68 163 0.05 13 0.40 -15 15.1 -3.4 -8.1 18.2 -25.4 0.80 0.65 -39 5.47 154 0.06 16 0.39 -21 14.8 -3.7 -8.2 17.9 -24.9 0.90 0.66 -43 5.40 152 0.06 18 0.39 -24 14.6 -3.7 -8.2 18.0 -24.7 1.00 0.64 -46 5.33 149 0.06 19 0.39 -26 14.5 -3.9 -8.3 17.8 -24.6 1.10 0.64 -50 5.25 147 0.06 20 0.39 -28 14.4 -3.9 -8.3 17.8 -24.4 1.20 0.63 -54 5.18 144 0.06 21 0.38 -31 14.3 -4.1 -8.3 17.8 -24.2 1.30 0.63 -58 5.10 142 0.06 21 0.38 -33 14.2 -4.1 -8.4 17.9 -24.0 1.40 0.62 -61 5.03 139 0.07 22 0.38 -35 14.0 -4.2 -8.4 17.9 -23.7 1.50 0.62 -64 4.95 137 0.07 23 0.38 -37 13.9 -4.2 -8.4 18.2 -23.5 1.60 0.62 -68 4.88 134 0.07 23 0.38 -39 13.8 -4.2 -8.5 18.6 -23.3 1.70 0.61 -71 4.81 132 0.07 23 0.37 -42 13.6 -4.3 -8.5 18.4 -23.1 1.80 0.61 -74 4.73 130 0.07 24 0.37 -44 13.5 -4.3 -8.6 18.2 -23.0 1.90 0.61 -77 4.65 128 0.07 24 0.37 -46 13.4 -4.3 -8.6 18.0 -22.7 2.00 0.60 -81 4.58 125 0.07 24 0.37 -48 13.2 -4.4 -8.7 17.9 -22.6 2.10 0.60 -84 4.51 123 0.08 24 0.37 -50 13.1 -4.4 -8.7 17.7 -22.4 2.20 0.60 -87 4.45 121 0.08 24 0.36 -51 13.0 -4.5 -8.8 17.6 -22.3 2.30 0.60 -89 4.36 119 0.08 24 0.36 -54 12.8 -4.5 -8.8 17.5 -22.2 2.40 0.59 -92 4.29 117 0.08 24 0.36 -55 12.7 -4.5 -8.8 17.3 -21.9 2.50 0.59 -95 4.23 115 0.08 24 0.36 -57 12.5 -4.5 -8.9 17.2 -21.8 3.00 0.59 -108 3.91 105 0.09 23 0.35 -66 11.8 -4.6 -9.1 16.5 -21.2 3.50 0.58 -119 3.62 96 0.09 23 0.34 -73 11.2 -4.7 -9.3 15.9 -20.6 4.00 0.57 -130 3.36 88 0.10 22 0.34 -81 10.5 -4.8 -9.5 15.4 -20.3 4.50 0.57 -140 3.13 80 0.10 21 0.33 -88 9.9 -4.9 -9.6 14.9 -19.9 5.00 0.57 -149 2.93 73 0.11 20 0.33 -94 9.3 -5.0 -9.8 14.4 -19.5 5.50 0.56 -157 2.76 66 0.11 20 0.32 -100 8.8 -5.1 -9.9 14.0 -19.2 6.00 0.55 -166 2.58 57 0.11 17 0.32 -113 8.2 -5.1 -9.9 12.5 -18.9 6.50 0.55 -172 2.30 48 0.11 17 0.32 -122 7.2 -5.3 -9.9 10.5 -19.1 7.00 0.54 -179 2.25 45 0.12 17 0.31 -133 7.0 -5.4 -10.1 10.3 -18.4 7.50 0.50 170 2.19 39 0.13 16 0.31 -137 6.8 -6.0 -10.1 9.6 -17.9 8.00 0.51 164 2.09 33 0.13 15 0.31 -139 6.4 -5.8 -10.1 9.3 -17.5 freq nf min gamma opt rn g a (ghz) (db) mag ang (db) 0.8 1.20 0.35 36 14.5 17.5 0.9 1.20 0.35 39 11.9 16.6 1.0 1.24 0.34 48 11.5 16.5 1.5 1.28 0.29 60 10.5 15.9 1.8 1.30 0.26 64 10.2 15.4 1.9 1.31 0.24 68 10.1 15.3 2.0 1.34 0.20 66 9.5 14.6 2.1 1.36 0.19 68 9.1 14.4 2.2 1.38 0.19 74 9.0 14.2 2.3 1.40 0.19 76 9.0 14.2 2.4 1.40 0.18 75 8.7 13.9 2.5 1.40 0.18 83 8.6 13.9 3.0 1.42 0.19 91 8.1 13.4 3.5 1.47 0.20 109 7.7 12.6 4.0 1.50 0.22 117 7.3 12.1 4.5 1.54 0.23 130 7.2 11.4 5.0 1.61 0.23 144 6.6 10.9 5.5 1.64 0.25 153 6.1 10.4 6.0 1.72 0.29 167 5.7 9.8 1.+ 01.11.13, 9:01 am page 7 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters and noise parameters t c = 25 c, v d = 3.0 v, i d = 20 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out g max isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.1 0.75 -11 6.78 174 0.04 12 0.39 -11 16.6 -2.5 -8.1 20.8 -27.1 0.5 0.62 -28 6.81 162 0.05 12 0.30 -16 16.7 -4.1 -10.4 19.1 -26.2 0.8 0.60 -42 6.53 153 0.05 16 0.30 -23 16.3 -4.4 -10.5 18.7 -25.8 0.9 0.60 -46 6.44 151 0.05 17 0.30 -26 16.2 -4.4 -10.5 18.8 -25.7 1.0 0.59 -50 6.34 148 0.05 18 0.30 -28 16.0 -4.6 -10.6 18.6 -25.5 1.1 0.58 -54 6.24 145 0.05 19 0.30 -31 15.9 -4.7 -10.6 18.5 -25.4 1.2 0.58 -58 6.14 143 0.06 20 0.29 -33 15.8 -4.8 -10.6 18.4 -25.0 1.3 0.57 -62 6.05 140 0.06 21 0.29 -36 15.6 -4.8 -10.7 18.4 -24.9 1.4 0.57 -65 5.95 138 0.06 21 0.29 -38 15.5 -4.9 -10.7 18.3 -24.7 1.5 0.57 -69 5.85 135 0.06 22 0.29 -40 15.3 -4.9 -10.8 18.2 -24.6 1.6 0.57 -72 5.75 133 0.06 23 0.29 -42 15.2 -4.9 -10.8 18.2 -24.3 1.7 0.56 -76 5.66 130 0.06 23 0.29 -45 15.0 -5.0 -10.9 18.1 -24.2 1.8 0.56 -79 5.56 128 0.06 23 0.28 -47 14.9 -5.0 -10.9 18.0 -24.0 1.9 0.56 -82 5.46 126 0.06 23 0.28 -49 14.7 -5.0 -11.0 18.0 -23.9 2.0 0.56 -86 5.36 124 0.07 24 0.28 -51 14.6 -5.1 -11.0 17.9 -23.6 2.1 0.55 -89 5.27 122 0.07 24 0.28 -53 14.4 -5.1 -11.1 17.8 -23.5 2.2 0.55 -92 5.19 119 0.07 24 0.28 -55 14.3 -5.1 -11.2 17.7 -23.3 2.3 0.55 -95 5.08 117 0.07 24 0.28 -57 14.1 -5.2 -11.2 17.5 -23.2 2.4 0.55 -98 4.99 115 0.07 24 0.28 -58 14.0 -5.2 -11.2 17.4 -23.1 2.5 0.55 -100 4.91 113 0.07 24 0.27 -60 13.8 -5.2 -11.2 17.3 -23.0 3.0 0.54 -113 4.51 104 0.08 24 0.27 -68 13.1 -5.3 -11.4 16.6 -22.4 3.5 0.54 -125 4.15 95 0.08 24 0.26 -76 12.4 -5.4 -11.6 15.7 -21.9 4.0 0.53 -135 3.84 87 0.08 24 0.26 -83 11.7 -5.5 -11.6 14.9 -21.5 4.5 0.53 -145 3.56 79 0.09 24 0.26 -89 11.0 -5.6 -11.7 14.1 -21.1 5.0 0.52 -153 3.33 72 0.09 24 0.26 -95 10.4 -5.6 -11.8 13.4 -20.7 5.5 0.52 -162 3.12 65 0.10 24 0.26 -100 9.9 -5.8 -11.8 12.7 -20.4 6.0 0.51 -169 2.91 57 0.10 24 0.26 -114 9.3 -5.8 -11.6 12.0 -19.9 6.5 0.50 -176 2.58 49 0.10 24 0.26 -124 8.2 -6.0 -11.7 10.6 -19.6 7.0 0.49 178 2.54 45 0.11 24 0.26 -135 8.1 -6.2 -11.6 10.4 -19.4 7.5 0.46 166 2.47 39 0.12 24 0.27 -134 7.9 -6.8 -11.4 9.9 -18.8 8.0 0.47 161 2.35 33 0.12 23 0.27 -138 7.4 -6.6 -11.3 9.6 -18.3 freq nf min gamma opt rn g a (ghz) (db) mag ang (db) 0.8 1.16 0.34 40 12.1 18.0 0.9 1.18 0.33 46 12.0 17.6 1.0 1.19 0.32 50 11.5 17.6 1.5 1.19 0.28 60 10.7 16.6 1.8 1.24 0.23 69 10.0 16.0 1.9 1.26 0.22 73 9.6 15.8 2.0 1.28 0.18 72 9.8 15.7 2.1 1.31 0.17 75 9.3 15.4 2.2 1.31 0.15 81 9.2 15.2 2.3 1.31 0.16 83 9.1 15.1 2.4 1.32 0.16 81 8.9 14.9 2.5 1.33 0.16 89 8.7 14.8 3.0 1.32 0.18 97 8.3 14.2 3.5 1.36 0.18 116 8.1 13.5 4.0 1.40 0.20 123 7.9 12.8 4.5 1.43 0.22 136 7.9 12.2 5.0 1.51 0.23 150 7.7 11.6 5.5 1.55 0.25 158 7.6 11.1 6.0 1.62 0.29 172 7.7 10.6 1.+ 01.11.13, 9:01 am page 8 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters and noise parameters t c = 25 c, v d = 3.0 v, i d = 40 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out g max isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.1 0.75 -11 7.39 173 0.04 18 0.35 -12 17.4 -2.5 -9.2 22.1 -27.7 0.5 0.62 -29 7.38 162 0.05 11 0.26 -16 17.4 -4.1 -11.8 19.8 -26.7 0.8 0.60 -43 7.06 153 0.05 15 0.25 -23 17.0 -4.4 -12.0 19.4 -26.6 0.9 0.60 -47 6.95 150 0.05 16 0.25 -26 16.8 -4.4 -12.0 19.4 -26.4 1.0 0.59 -51 6.84 147 0.05 17 0.25 -28 16.7 -4.6 -12.0 19.1 -26.2 1.1 0.58 -55 6.73 145 0.05 18 0.25 -31 16.6 -4.7 -12.1 19.0 -26.0 1.2 0.58 -60 6.62 142 0.05 19 0.25 -33 16.4 -4.8 -12.1 18.9 -25.8 1.3 0.57 -63 6.51 140 0.05 20 0.25 -36 16.3 -4.8 -12.1 18.8 -25.7 1.4 0.57 -67 6.40 137 0.05 21 0.25 -38 16.1 -4.9 -12.2 18.7 -25.5 1.5 0.57 -71 6.29 135 0.05 22 0.25 -40 16.0 -4.9 -12.2 18.6 -25.4 1.6 0.57 -74 6.18 132 0.06 22 0.24 -42 15.8 -4.9 -12.3 18.5 -25.2 1.7 0.56 -78 6.07 130 0.06 23 0.24 -45 15.7 -5.0 -12.3 18.4 -25.0 1.8 0.56 -81 5.96 128 0.06 23 0.24 -47 15.5 -5.0 -12.4 18.3 -24.9 1.9 0.56 -85 5.85 125 0.06 24 0.24 -49 15.3 -5.0 -12.4 18.2 -24.6 2.0 0.56 -88 5.74 123 0.06 24 0.24 -51 15.2 -5.1 -12.4 18.1 -24.4 2.1 0.55 -91 5.64 121 0.06 24 0.24 -53 15.0 -5.1 -12.5 17.9 -24.3 2.2 0.55 -94 5.54 119 0.06 24 0.23 -54 14.9 -5.1 -12.6 17.7 -24.3 2.3 0.55 -97 5.43 117 0.06 25 0.24 -56 14.7 -5.2 -12.6 17.6 -24.2 2.4 0.55 -100 5.34 115 0.06 25 0.24 -58 14.5 -5.2 -12.6 17.4 -24.0 2.5 0.55 -103 5.24 113 0.06 25 0.23 -60 14.4 -5.2 -12.7 17.3 -23.9 3.0 0.54 -115 4.79 103 0.07 26 0.23 -67 13.6 -5.3 -12.8 16.6 -23.2 3.5 0.54 -127 4.40 95 0.07 26 0.23 -74 12.9 -5.4 -12.9 15.7 -22.7 4.0 0.53 -137 4.06 87 0.08 26 0.23 -81 12.2 -5.5 -12.9 14.9 -22.4 4.5 0.53 -147 3.77 79 0.08 27 0.23 -86 11.5 -5.6 -13.0 14.2 -21.9 5.0 0.52 -155 3.52 72 0.08 27 0.23 -91 10.9 -5.6 -12.9 13.5 -21.5 5.5 0.52 -164 3.30 65 0.09 28 0.23 -96 10.4 -5.8 -12.9 12.8 -21.1 6.0 0.51 -172 3.06 57 0.09 27 0.23 -112 9.7 -5.8 -12.7 12.2 -20.7 6.5 0.50 -176 2.73 49 0.09 25 0.23 -125 8.7 -6.0 -12.7 10.8 -20.8 7.0 0.49 177 2.69 46 0.10 28 0.23 -132 8.6 -6.2 -12.6 10.7 -19.9 7.5 0.46 165 2.61 40 0.11 28 0.24 -130 8.3 -6.8 -12.3 10.2 -19.3 8.0 0.47 160 2.49 34 0.12 27 0.25 -134 7.9 -6.6 -12.1 9.9 -18.7 freq nf min gamma opt rn g a (ghz) (db) mag ang (db) 0.8 1.23 0.36 33 14.7 19.0 0.9 1.24 0.35 42 12.4 18.2 1.0 1.27 0.35 50 11.5 18.2 1.5 1.28 0.28 63 10.3 17.3 1.8 1.32 0.25 68 10.1 16.7 1.9 1.32 0.24 72 9.9 16.4 2.0 1.37 0.22 72 9.4 16.2 2.1 1.40 0.20 74 9.2 16.0 2.2 1.40 0.21 79 9.1 15.8 2.3 1.40 0.20 82 9.0 15.7 2.4 1.40 0.20 81 8.7 15.5 2.5 1.42 0.20 88 8.6 15.4 3.0 1.43 0.22 97 8.0 14.7 3.5 1.47 0.22 115 7.5 14.0 4.0 1.51 0.24 124 7.0 13.3 4.5 1.56 0.25 138 6.7 12.7 5.0 1.65 0.26 151 6.1 12.1 5.5 1.64 0.29 160 5.6 11.6 6.0 1.77 0.32 173 5.3 11.1 1.+ 01.11.13, 9:02 am page 9 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters and noise parameters t c = 25 c, v d = 3.0 v, i d = 60 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out g max isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) (db) 0.1 0.76 -11 7.09 174 0.04 17 0.35 -11 17.0 -2.4 -9.1 21.7 -28.0 0.5 0.64 -29 7.08 162 0.05 10 0.26 -15 17.0 -3.9 -11.6 19.5 -26.9 0.8 0.61 -42 6.78 153 0.05 14 0.26 -21 16.6 -4.2 -11.7 19.1 -26.7 0.9 0.62 -47 6.69 151 0.05 15 0.26 -24 16.5 -4.2 -11.8 19.0 -26.6 1.0 0.60 -50 6.58 148 0.05 17 0.26 -26 16.4 -4.4 -11.8 18.8 -26.4 1.1 0.60 -55 6.48 145 0.05 18 0.26 -28 16.2 -4.5 -11.8 18.7 -26.4 1.2 0.59 -59 6.38 143 0.05 19 0.26 -31 16.1 -4.6 -11.8 18.6 -26.2 1.3 0.59 -63 6.28 140 0.05 19 0.26 -33 16.0 -4.6 -11.9 18.5 -26.0 1.4 0.58 -66 6.17 137 0.05 20 0.25 -35 15.8 -4.7 -11.9 18.3 -25.8 1.5 0.58 -70 6.07 135 0.05 21 0.25 -37 15.7 -4.7 -11.9 18.2 -25.7 1.6 0.58 -73 5.96 133 0.05 21 0.25 -39 15.5 -4.7 -12.0 18.1 -25.5 1.7 0.58 -77 5.86 130 0.05 22 0.25 -41 15.4 -4.8 -12.0 18.0 -25.4 1.8 0.57 -80 5.76 128 0.06 22 0.25 -43 15.2 -4.8 -12.1 17.9 -25.2 1.9 0.57 -84 5.66 126 0.06 23 0.25 -45 15.1 -4.8 -12.1 17.8 -25.0 2.0 0.57 -87 5.56 123 0.06 23 0.25 -47 14.9 -4.9 -12.1 17.7 -24.9 2.1 0.57 -90 5.46 121 0.06 24 0.25 -48 14.7 -4.9 -12.2 17.5 -24.7 2.2 0.57 -93 5.36 119 0.06 24 0.24 -50 14.6 -5.0 -12.3 17.4 -24.6 2.3 0.57 -96 5.26 117 0.06 24 0.24 -52 14.4 -5.0 -12.3 17.2 -24.4 2.4 0.56 -99 5.17 115 0.06 24 0.24 -53 14.3 -5.0 -12.3 17.1 -24.3 2.5 0.56 -102 5.07 113 0.06 24 0.24 -55 14.1 -5.0 -12.3 17.0 -24.2 3.0 0.56 -115 4.65 103 0.07 25 0.24 -62 13.3 -5.1 -12.5 16.2 -23.7 3.5 0.55 -126 4.27 95 0.07 26 0.24 -69 12.6 -5.2 -12.5 15.4 -23.2 4.0 0.54 -137 3.95 87 0.07 26 0.24 -75 11.9 -5.3 -12.6 14.6 -22.9 4.5 0.54 -146 3.67 79 0.08 27 0.24 -80 11.3 -5.4 -12.6 13.9 -22.4 5.0 0.54 -155 3.42 72 0.08 28 0.24 -85 10.7 -5.4 -12.5 13.3 -22.0 5.5 0.53 -163 3.21 65 0.08 29 0.24 -90 10.1 -5.5 -12.5 12.7 -21.6 6.0 0.52 -171 2.98 57 0.09 28 0.24 -106 9.5 -5.7 -12.4 11.9 -21.2 6.5 0.51 -177 2.66 49 0.09 27 0.25 -118 8.5 -5.8 -12.1 10.7 -21.3 7.0 0.50 177 2.63 45 0.10 30 0.24 -125 8.4 -6.0 -12.4 10.5 -20.4 7.5 0.47 165 2.55 39 0.10 30 0.25 -130 8.1 -6.6 -12.0 10.0 -19.7 8.0 0.48 161 2.43 33 0.11 30 0.26 -127 7.7 -6.4 -11.8 9.8 -19.2 freq nf min gamma opt rn g a (ghz) (db) mag ang (db) 0.8 1.47 0.38 42 19.0 18.8 0.9 1.47 0.38 48 17.8 18.2 1.0 1.51 0.38 49 17.3 18.1 1.5 1.55 0.34 60 16.1 17.4 1.8 1.56 0.31 64 14.9 17.0 1.9 1.59 0.30 68 14.6 16.8 2.0 1.62 0.29 69 14.4 16.2 2.1 1.65 0.28 71 14.3 16.0 2.2 1.66 0.28 76 14.2 15.8 2.3 1.67 0.27 78 14.1 15.7 2.4 1.67 0.27 79 13.9 15.5 2.5 1.70 0.27 84 13.6 15.4 3.0 1.70 0.27 96 12.9 14.7 3.5 1.76 0.29 113 12.7 14.0 4.0 1.83 0.31 124 12.4 13.4 4.5 1.90 0.32 137 12.2 12.7 5.0 2.00 0.34 150 11.8 12.2 5.5 2.05 0.36 159 11.7 11.7 6.0 2.19 0.39 173 11.6 11.2 1.+ 01.11.13, 9:02 am page 10 "epcf1bhf.blfs+11$
mga-725m4 typical scattering parameters zero bias t c = 25 c, v d = 0 v, i d = 0 ma, z o = 50 ? (test circuit of figure 2) freq s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 s 21 rl in rl out isolation (ghz) mag. ang. mag. ang. mag. ang. mag. ang. (db) (db) (db) (db) 0.1 0.07 -116 0.04 10 0.04 10 0.83 179 -27.3 -23.2 -1.6 -27.3 0.5 0.31 -136 0.06 28 0.06 29 0.85 176 -24.7 -10.2 -1.4 -24.7 0.8 0.42 -143 0.07 30 0.07 30 0.85 174 -22.9 -7.5 -1.4 -22.9 1.2 0.52 -154 0.09 28 0.09 28 0.85 171 -21.4 -5.6 -1.4 -21.4 1.6 0.58 -163 0.09 26 0.09 26 0.85 168 -20.5 -4.7 -1.4 -20.5 2.0 0.62 -170 0.10 24 0.10 25 0.85 165 -20.0 -4.2 -1.4 -19.9 2.4 0.64 -176 0.11 24 0.11 24 0.85 162 -19.5 -3.8 -1.4 -19.5 2.8 0.66 178 0.11 23 0.11 23 0.85 159 -19.2 -3.6 -1.4 -19.1 3.2 0.67 173 0.12 23 0.12 23 0.85 156 -18.7 -3.4 -1.4 -18.7 3.6 0.69 168 0.12 23 0.12 23 0.85 153 -18.3 -3.3 -1.5 -18.3 3.8 0.69 166 0.12 23 0.13 23 0.85 151 -18.1 -3.2 -1.5 -18.1 4.0 0.69 163 0.13 23 0.13 23 0.84 149 -17.9 -3.2 -1.5 -17.9 4.4 0.70 159 0.13 22 0.13 23 0.84 146 -17.5 -3.1 -1.5 -17.5 4.8 0.71 154 0.14 22 0.14 22 0.84 143 -17.0 -3.0 -1.5 -17.0 5.2 0.72 150 0.15 22 0.15 22 0.84 139 -16.5 -2.9 -1.5 -16.5 5.6 0.72 145 0.16 20 0.16 21 0.83 135 -16.0 -2.8 -1.6 -16.0 6.0 0.72 142 0.16 17 0.16 17 0.83 135 -15.7 -2.9 -1.6 -15.7 minipak package outline drawing ordering information part number devices per container container mga-725m4-tr1 3000 7?reel mga-725m4-tr2 10000 13?eel mga-725m4-blk 100 antistatic bag solder pad dimensions 1.44 (0.058) 1.40 (0.056) 1.20 (0.048) 1.16 (0.046) 0.70 (0.030) max 1.12 (0.045) 1.08 (0.043) ground note: pad orientation is shown as viewed from to p of p ackage. input ground output 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) -0.07 (-0.003) -0.03 (-0.001) 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.42 (0.017) 0.38 (0.015) 0.92 (0.037) 0.88 (0.035) 1.32 (0.053) 1.28 (0.051) 0.00 1.+ 01.11.13, 9:02 am page 11 "epcf1bhf.blfs+11$
package 4t minipak 1412 device orientation t ape dimensions for outline 4t user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view aa aa aa aa note: ?a?represents package marking code. package marking is right side up with carrier tape perforations at top. conforms to electronic industries rs-481, ?aping of surface mounted components for automated placement.?standard quantity is 3,000 devices per reel. p p 0 p 2 f w c d 1 d e a 0 5 max. t 1 (carrier tape thickness) t t (cover tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 1.40 0.05 1.63 0.05 0.80 0.05 4.00 0.10 0.80 0.05 0.055 0.002 0.064 0.002 0.031 0.002 0.157 0.004 0.031 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 - 0.004 0.010 0.001 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.40 0.10 0.062 0.001 0.213 0.004 0.002 0.00004 cover tape 1.+ 01.11.13, 9:02 am page 12 "epcf1bhf.blfs+11$
application information: designing with the mga-725m4 rfic amplifier/bypass switch description the mga-725m4 is a single stage gaas rfic amplifier with an integrated bypass switch. a functional diagram of the mga-725m4 is shown in figure 1. rf output amplifier bypass mode rf input figure 1. mga-725m4 functional diagram. the mga-725m4 is designed for receivers and transmitters operat- ing from 100 mhz to 6 ghz with an emphasis on 800 mhz and 1.9 ghz cdma applications. the mga-725m4 combines low noise performance with high linearity to make it especially advantageous for use in receiver front-ends. the purpose of the switch feature is to prevent distortion of high signal levels in receiver applica- tions by bypassing the amplifier altogether. the bypass switch can be thought of as a 1-bit digital agc circuit that not only prevents distortion by bypassing the mga-725m4 amplifier, but also reduces front-end system gain by approximately 16 db to avoid overdriving subsequent stages in the receiver such as the mixer. an additional feature of the mga-725m4 is the ability to externally set device current to balance output power capability and high linearity with low dc power consumption. the adjust- able current feature of the mga-725m4 allows it to deliver output power levels in excess of +15 dbm (p 1db ), thus extending its use to other system application such as transmitter driver stages. the mga-725m4 is designed to operate from a +3-volt power supply and is contained in minia- ture minipak 1412 package to minimize printed circuit board space. lna application for low noise amplifier applica- tions, the mga-725m4 is typically biased in the 1020 ma range. minimum nf occurs at 20 ma as noted in the performance curve of nf min vs i d . biasing at currents significantly less than 10 ma is not recommended since the character- istics of the device begin to change very rapidly at lower currents. the mga-725m4 is matched internally for low nf. over a current range of 1030 ma, the magnitude of g opt at 1900 mhz is typically less than 0.25 and additional impedance matching would only net about 0.1 db improvement in noise figure. w ithout external matching, the input return loss for the mga-725m4 is approximately 5 db at 1900 mhz. if desired, a small amount of nf can be traded off for a significant improvement in input match. for example, the addition of a series inductance of 2.7 to 3.9 nh at the input of the mga-725m4 will improve the input return loss to grater than 10 db with a sacrifice in nf of only 0.1 db. the output of the mga-725m4 is internally matched to provide an output swr of approximately 2:1 at 1900 mhz. input and output matches both improve at higher frequencies. driver amplifier applications the flexibility of the adjustable current feature makes the mga-725m4 suitable for use in transmitter driver stages. biasing the amplifier at 4050 ma enables it to deliver an output power at 1 db gain compression of up to +16 dbm. power efficiency in the unsaturated driver mode is on the order of 30%. if operated as a saturated amplifier, both output power and efficiency will increase. since the mga-725m4 is internally matched for low noise figure, it may be desirable to add external impedance matching at the input to improve the power match for driver applications. since the reactive part of the input of the device impedance is capacitive, a series inductor at the input is often all that is needed to provide a suitable match for many applica- tions. for 1900 mhz circuits, a series inductance of 3.9 nh will match the input to return loss of approximately 13 db. as in the case of low noise bias levels, the output of the mga-725m4 is already well matched to 50 ? and no additional matching is needed for most applications. when used for driver stage applications, the bypass switch feature of the mga-725m4 can be used to shut down the amplifier to conserve supply current during non-transmit period. supply current in the bypass stage is nominally 2 ma. biasing biasing the mga-725m4 is similar to biasing a discrete gaas fet. passive biasing of the mga-725m4 may be accomplished by either of two conventional methods, either by biasing the gate or by using a source resistor. gate bias using this method, pins 1 and 3 of the amplifier are dc grounded and a negative bias voltage is applied to pin 2 as shown in figure 2. this method has the advantage of not only dc, but also rf grounding both of the ground pins of the mga-725m4. direct rf grounding 1.+ 01.11.13, 9:02 am page 13 "epcf1bhf.blfs+11$
of devices ground pins results in slightly improved performance while decreasing potential insta- bilities, especially at higher frequencies. the disadvantage is that a negative supply voltage is required. output & v d input v ref figure 2. gate bias method. dc access to the input terminal for applying the gate bias voltage can be made through either a rf or high impedance transmission line as indicated in figure 2. the device current, i d , is deter- mined by the voltage at v ref (pin 2) with respect to ground. a plot of typical i d vs v ref is shown in figure 3. maximum device current (approximately 65 ma) occurs at v ref = 0. the device current may also be estimated from the following equation: v ref = 0.11 i d ?0.96 w here i d is in ma and v ref is in volts. 0 10 50 40 30 20 -0.8 -0.7 -0.6 -0.5 -0.4 -0.2 -0.3 i d (ma) v ref (v) figure 3. device current vs. v ref . the gate bias method would not normally be used unless a negative supply voltage was readily avail- able. for reference, this is the method used in the characteriza- tion test circuits shown in figures 1 and 2 of the mga-725m4 data sheet. source resistor bias the source resistor method is the simplest way of biasing the mga-725m4 using a single, positive supply voltage. this method, shown in figure 4, places the rf input at dc ground and requires both of the device grounds to be rf bypassed. device current, i d , is determined by the value of the source resis- tance, r bias , between either pin 1 and pin 3 of the mga-725m4 and dc ground. pin 1 and pin 3 are connected internally in the rfic. maximum device current (ap- proximately 65 ma) occurs for r bias = 0 ? . output & v d input 24 3 1 r bias figure 4. source resistor bias. a simple method recommended for dc grounding the input terminal is to merely add a resistor from pin 2 to ground, as shown in figure 4. the value of the shunt r can be comparatively high since the only voltage drop across it is due to minute leakage currents that in the ma range. a value of 1k ? would adequately dc ground the input while loading the rf signal by only 0.2 db loss. a plot of typical i d vs r bias is shown in figure 5. 0 10 60 50 40 30 20 040 20 60 80 100 140 120 i d (ma) r bias ( ? ) figure 5. device current vs. r bias . the approximate value of the external resistor, r bias , may also be calculated from: r bias = 964 (1 0.112 i d ) i d where r bias is in ohms and i d is the desired device current in ma. the source resistor technique is the preferred and most common method of biasing the mga-725m4. adaptive biasing for applications in which input power levels vary over a wide range, it may be useful to dynami- cally adapt the bias of the mga-725m4 to match the signal level. this involves sensing the signal level at some point in the system and automatically adjust- ing the bias current of the ampli- fier accordingly. the advantage of adaptive biasing is conservation of supply current (longer battery life) by using only the amount of current necessary to handle the input signal without distortion. adaptive biasing of the mga-725m4 can be accomplished by either analog or digital means. for the analog control case, an active current source (discrete device or ic) is used in lieu of the source bias resistor. for simple digital control, electronic switches 1.+ 01.11.13, 9:02 am page 14 "epcf1bhf.blfs+11$
can be used to control the value of the source resistor in discrete increments. both methods of adaptive biasing are depicted in figure 6. applying the device voltage common to all methods of biasing, voltage v d is applied to the mga-725m4 through the rf output connection (pin 4). a rf choke is used to isolate the rf signal from the dc supply. the bias line is capacitively bypassed to keep rf from the dc supply lines and prevent resonant dips or peaks in the response of the amplifier. where practical, it may be cost effective to use a length of high impedance transmission line (preferably /4) in place of the rfc. when using the gate bias method, the overall device voltage is equal to the sum of v ref at pin 2 and voltage v d at pin 4. as an example, to bias the device at the typical operating voltage of 3 volts, v d would be set to 2.5 volts for a v ref of -0.5 volts. figure 7 shows a dc schematic of a gate bias circuit. just as for the gate bias method, the overall device voltage for source resistor biasing is equal to v ref + v d . since v ref is zero when using a source resistor, v d is the same as the device operating voltage, typically 3 volts. a source resistor bias circuit is shown in figure 8. rf output rfc v d = +2.5 v vref = -0.5 v rf input figure 7. dc schematic for gate bias. rf output rfc v d = +2.5 v r bias rf input figure 8. dc schematic of source resistor biasing. a dc blocking capacitor at the output of the rfic isolates the supply voltage from succeeding circuits. if the source resistor method of biasing is used, the rf input terminal of the mga-725m4 is at dc ground potential and a blocking capacitor is not required unless the input is connected directly to a preceding stage that has a dc voltage present. biasing for higher linearity or output power while the mga-725m4 is designed primarily for use up to 50 ma in 3 volt applications, the output power can be increased by using higher currents and/or higher supply voltages. if higher bias levels are used, appropriate caution should be observed for both the thermal limits and the absolute maximum ratings. as a guideline for operation at higher bias levels, the maximum operating conditions shown in the data sheet table of absolute maximum ratings should be followed. this set of conditions is the maximum combination of bias voltage, bias current, and device temperature that is recommended for reliable operation. note: in contrast to absolute maximum ratings, in which exceeding may one parameter may result in damage to the device, all of the maximum operating conditions may reliably be applied to the mga-725m4 simultaneously. controlling the switch the state of the mga-725m4 (amplifier or bypass mode) is controlled by the device current. for device currents greater than 5 ma, the mga-725m4 functions as an amplifier. if the device current is set to zero, the mga-725m4 is switched into bypass mode in which the ampli- fier is turned off and the signal is routed around the amplifier with a loss of approximately 2.5 db. the bypass state is normally engaged in the presence of high input levels to prevent distortion of the signal that might occur in the amplifier. in the bypass state the input toi is very high, typi- cally +39 dbm at 1900 mhz. figure 6. adaptive bias control. analog control output & v d output & v d input input v ref 24 3 1 v ref analog control (b) digital (a) analog 22 3 1 1.+ 01.11.13, 9:02 am page 15 "epcf1bhf.blfs+11$
the simplest method of placing the mga-725m4 into the bypass mode is to open-circuit the ground terminals at pins 1 and 3. with the ground connection open, the internal control circuit of the mga-725m4 auto-switches from the amplifier mode into a bypass state and the device current drops to near zero. nominal current in the bypass state is 2 a with a maximum of 15 a. 24 3 1 r bias bypass switch enable output & v d input figure 9. mga-725m4 amplifier/bypass state switching. an electronic switch can be used to control states as shown in figure 9. the control switch could be implemented with either a discrete transistor or simple ic. the speed at which the mga-725m4 switches between states is extremely fast and will normally be limited by the time constants of external circuit components, such as the bias circuit and the bypass and block- ing capacitors. the input and output of the mga-725m4 while in the bypassed state are internally matched to 50 ? . the input return loss can be further improved at 1900 mhz by adding a 2.9 to 3.9 nh series inductor added to the input. this is the same approximate value of inductor that is used to improve input match when the mga-725m4 is in the amplifier state. thermal considerations good thermal design is always an important consideration in the reliable use of any device, since the mean time to failure (mttf) of semiconductors is inversely proportional to the operating temperature. the mga-725m4 is a compara- tively low power dissipation device. when biased at 3 volts and 20 ma for lna application, the power dissipation is 3.0 volts x 20 ma or 60 mw. the temperature increment from the rfic channel to its case is then 0.060 watt x 200 c/watt, or only 12 c. sub- tracting the channel to case temperature rise from the sug- gested maximum junction tem- perature of 150 c, the resulting maximum allowable case tempera- ture is 138 c. the worst case thermal situation occurs when the mga-725m4 is operated at its maximum operat- ing conditions in an effort to maximize output power or to achieve minimum distortion. a similar calculation for the maximum operating bias of 4.2 volts and 60 ma yields a maximum allowable case tempera- ture of 100 c. this calculation further assumes the worst case of no rf power being extracted from the device. when operated in a saturated mode, both power added efficiency and the maxi- mum allowable case temperature will increase. note case?temperature for surface mount packages such as the sot-343 refers to the interface between the package pins and the mounting surface, i.e., the tem- perature at the pcb mounting pad. the primary heat path from the rfic chip to the system heat sink is by means of conduction through the package leads and ground vias to the ground plane of the pcb. pcb layout and grounding when laying out a printed circuit board for the mga-725m4, several points should be considered. of primary concern is the rf bypass- ing of the ground terminals when the device is biased using the source resistor method. package footprint a suggested pcb pad print for the miniature, minipak 1412 package used by the mga-725m4 is shown in figure 10. 0.5 0.020 0.4 0.016 0.4 0.016 1.1 0.043 0.3 0.012 0.5 0.020 0.3 0.012 figure 10. pcb pad print for minipak 1412 package (mm [inches]). this pad print provides allowance for package placement by auto- mated assembly equipment without adding excessive parasitics that could impair the high frequency performance of the mga-725m4. the layout is shown with a footprint of the mga-725m4 superimposed on the pcb pads for reference. rf bypass for layouts using the source resistor method of biasing, both of the ground terminals of the mga-725m4 must be well by-passed to maintain device stability. beginning with the package pad print in figure 10, a rf layout similar to the one shown in figure 11 is a good starting point for using the mga-725m4 with capacitor-bypassed ground terminals. it is a best practice to use multiple vias to minimize overall ground path inductance. 1.+ 01.11.13, 9:02 am page 16 "epcf1bhf.blfs+11$
t wo capacitors are used at each of the pcb pads for both pins 1 and 3. the value of the bypass capaci- tors is a balance between provid- ing a small reactance for good rf grounding, yet not being so large that the capacitors parasitics introduce undesirable resonances or loss. figure 11. layout for rf bypass. if the source resistor biasing method is used, a ground pad located near either pin 1 or pin 3 may be used to connect the current-setting resistor (r bias ) directly to dc ground. if the r bias resistor is not located immediately adjacent to the mga-725m4 (as may be the case of dynamic control of the devices linearity), then a small series resistor (e.g. 10 ? ) located near the ground terminal will help de-q the connection from the mga-725m4 to an external current-setting circuit. pcb material fr-4 or g-10 type dielectric materials are typical choices for most low cost wireless applica- tions using single or multi-layer printed circuit boards. the thick- ness of single-layer boards usually range from 0.020 to 0.031 inches. circuit boards should be con- structed so that distance to ground for rf signals are less than 0.031 inches. using pcb layer stacks that are greater than this are not recommended due to excessive inductance in the vias. application example an example evaluation pcb layout for the mga-725m4 is shown in figure 12. this evaluation circuit is designed for operation from a +3-volts supply and includes provision for a 2-bit dip switch to set the state of the mga-725m4. for evaluation purposes, the 2-bit switch is used to set the device to either of four states: (1) bypass mode-switch bypasses the amplifier, (2) low noise amplifier mode?ow bias current, (3) and (4) driver amplifier modeshigh bias currents. figure 12. pcb layout for evaluation circuit. a complete evaluation amplifier optimized for use at 1900 mhz is shown with all related compo- nents and sma connectors in figure 13. a schematic diagram o f the evaluation circuit is shown in figure 14 with component values in table 1. t able 1. component values for 1900 mhz amplifier. r1 =5.1k ? c=10 0pf r2 =5.1k ? c0 =1000pf r3 =10 ? c1 =100 pf r4 =24 ? c2 =47 pf l1 =3.9 nh c3 =30 pf rfc =22 nh c4 =22 pf sw1, sw2 dip switch c5 =22 pf sc short c6 =30 pf the on-board resistors r3 and r4 form the equivalent source bias resistor r bias as indicated in the schematic diagram in figure 14. in this example, resistor values of r3 = 10 ? and r4 =24 ? were chosen to set the nominal device current for the four states: (1) bypass mode, 0 ma, (2) lna mode, 20 ma, (3) driver, 35 ma, and (4) driver, 40 ma. c c0 c c2 c6 c5 l1 c1 r1 r2 c0 sw r3 c4 c3 rfc sc c c0 vd vin vcon in csp out agilent mga-71,72 9/00 figure 13. complete amplifier with component reference designators. 1.+ 01.11.13, 9:02 am page 17 "epcf1bhf.blfs+11$
figure 14. schematic diagram of 1900 mhz evaluation amplifier. rf output c c0 c2 c rfc v d r bias c3 c1 l1 r1 c4 c5 c c0 sw2 sw1 r2 c6 r3 r4 rf input c0 vcon other currents can be set by positioning the dip switch to the bypass state and adding an external bias resistor to v con . unless an external resistor is used to set the current, the v con termi- nal is left open. dc blocking capacitors are provided for the both the input and output. the 2-pin, 0.100" centerline single row headers attached to the v d and v con connections on the pcb provide a convenient means of making connections to the board using either a mating connector or clip leads. a note on performance actual performance of the mga-725m4 as measured in an evaluation circuit may not exactly match the datasheet specifica- tions. the circuit board material, passive components, rf bypasses and connectors all introduce losses and parasitics that degrade device performance. for the evaluation circuit above, fabricated on 0.031-inch thick getek g200d (e r =4.2) dielectric material, circuit losses of about 0.3 db would be expected at both the input and output sides of the rfic at 1900 mhz. measured noise figure (3 volts, 20 ma bias) would then be approximately 1.8 db and gain 13.8 db. hints and troubleshooting preventing oscillation stability of the mga-725m4 is dependent on having very good rf grounding. inadequate device grounding or poor pcb layout techniques could cause the device to be potentially unstable. even though a design may be unconditionally stable (k>1 and b1>0) over its full frequency range, other possibilities exist that may cause an amplifier circuit to oscillate. one condition to check for is feedback in the bias circuit. it is important to capacitively bypass the connections to active bias circuits to ensure stable operation. in multistage circuits, feedback through bias lines can also lead to oscillation. components of insufficient quality for the frequency range of the amplifier can sometimes lead to instability. also, component values that are chosen to be much higher in value than is appropriate for the application can present a problem. in both of these cases, the compo- nents may have reactive parasitics that make their impedances very different than expected. chip capacitors may have excessive inductance or chip inductors can exhibit resonances at unexpected frequencies. a note on supply line bypassing multiple bypass capacitors are normally used throughout the power distribution within a wireless system. consideration should be given to potential resonances formed by the combi- nation of these capacitors and the inductance of the dc distribution lines. the addition of a small value resistor in the bias supply line between bypass capacitors will often de-q the bias circuit and eliminate resonance effects. statistical parameters several categories of parameters appear within the electrical specification portion of the mga-725m4 data sheet. param- eters may be described with values that are either ?inimum or maximum? ?ypical?or ?tandard deviation? the values for parameters are based on comprehensive product characterization data, in which automated measurements are made on a statistically significant number of parts taken from nonconsecutive process lots of 1.+ 01.11.13, 9:02 am page 18 "epcf1bhf.blfs+11$
semiconductor wafers. the data derived from product character- ization tends to be normally distributed, e.g., fits the standard bell curve. parameters considered to be the most important to system perfor- mance are bounded by minimum or maximum values. for the mga-725m4, these parameters are: v c test , nf test , g a test , iip3 test , and il test . each of the guaranteed parameters is 100% tested as part of normal manufacturing and test process. va lues for most of the parameters in the table of electrical specifica- tions that are described by typical data are mathematical mean ( ), of the normal distribution taken from the characterization data. for parameters where measurements of mathematical averaging may not be practical, such as s-parameters or noise parameters and the performance curve, the data represents a nominal part taken from the center of the character- ization distribution. typical values are intended to be used as a basis for electrical design. to assist designers in optimizing not only the immediate amplifier circuit using the mga-725m4, but to also evaluate and optimize trade-offs that affect a complete wireless system, the standard deviation ( ) is provided for many of the electrical specification parameters (at 25 c). the stan- dard deviation is a measure of variability about the mean. it will be recalled that a normal distribu- tion is completely described by the mean and standard deviation. standard statistics tables or calculations provide the probabil- ity of a parameter falling between any two values, usually symmetri- cally located about the mean. referring to figure 15 for ex- ample, the probability of a param- eter being between 1 is 68.3%; between 2 is 95.4%; and between 3 is 99.7%. 68% 95% 99% parameter value mean ( ) (typical) -3 -2 -1 +1 +2 +3 figure 15. normal distribution curve. phase reference planes the positions of the reference planes used to specify s-param- eters and noise parameters for the mga-725m4 are shown in fig- ure 16. as seen in the illustration, the reference planes are located at centre of package solder pads. s and noise parameter data was taken with the package mounted to 50 ohm lines on 10 mil alumina substrates, and the ground pads were connected directly to the substrate ground plane through a solid metal rib. designers should include the parasitics of the grounding system used in their application. bottom view reference planes figure 16. phase reference planes. smt assembly the package can be soldered using either lead-bearing or lead- free alloys. reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g. ir or vapor phase reflow, wave solder- ing, etc) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. components with a low mass, such as the minipak 1412 package, will reach solder reflow temperatures faster than those with a greater mass. the mga-725m4 has been quali- fied to the time-temperature profile shown in figure 17. this profile is representative of an ir reflow type of surface mount assembly process. after ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. the preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. the reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. the rates of change of tempera- ture for the ramp-up and cool- down zones are chosen to be low enough to not cause deformation of board or damage to compo- nents due to thermal shock. the maximum temperature in the reflow zone (t max ) should not exceed 235 c. 1.+ 01.11.13, 9:02 am page 19 "epcf1bhf.blfs+11$
these parameters are typical for a surface mount assembly process for the mga-725m4. as a general guideline, the circuit board and components should only be exposed to the minimum tempera- tures and times necessary to achieve a uniform reflow of solder. electrostatic sensitivity rfic are electrostatic discharge (esd) sensitive devices. although the mga-725m4 is robust in design, permanent damage may occur to these devices if they are subjected to high-energy electro- static discharges. electrostatic charges as high as several thou- sand volts (which readily accumu- figure 17. surface mount assembly profile. time (seconds) t max temperature ( c) 0 0 50 100 150 200 250 60 preheat zone cool down zone reflow zone 120 180 240 300 late on the human body and on test equipment) can discharge without detection and may result in failure or degradation in performance and reliability. electronic devices may be sub- jected to esd damage in any of the following areas : storage & handling inspection assembly & testing in-circuit use the mga-725m4 is an esd class 1 device. therefore, proper esd precautions are recommended when handling, inspection, testing, assembling, and using these devices to avoid damage. www.semiconductor.agilent.com data subject to change. copyright ?2001 agilent technologies, inc. obsoletes 5988-1547en october 1, 2001 5988-4278en any user-accessible points in wireless equipment (e.g. antenna or battery terminals) provide an opportunity for esd damage. for circuit applications is which the mga-725m4 is used as an input or output stage with close coupling to an external antenna, the rfic should be protected from high voltage spikes due to human contact with the antenna. a best practice, illustrated in figure 18, is to place a shunt inductor (rfc) at the antenna connection to protect the receiver and transmitter circuits. it is often advantageous to integrate the rfc into a diplexer or t/r switch control circuitry. figure 18. in-circuit esd protection. 1.+ 01.11.13, 9:02 am page 20 "epcf1bhf.blfs+11$
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